| PART |
Description |
Maker |
| MT4LDT464AG MT4LDT264AG MT4LDT164AG |
4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模
1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
|
Micron Technology, Inc.
|
| MT28F160S3 |
2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16闪速存储器)
|
Micron Technology, Inc.
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| MT4C4003J |
1 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| MT4C4M4E8T MT4C4M4E9T MT4C4M4E8TG MT4LC4M4E9TGS MT |
4 MEG x 4 EDO DRAM
|
MICRON[Micron Technology]
|
| MT9LD272A |
2, 4 MEG x 72 NONBUFFERED DRAM DIMMs
|
Micron Technology, Inc.
|
| MT4C4007J |
1 MEG x 4 DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH
|
Micron Technology
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| MT48H4M16LFB4-75ITH MT48H4M16LFB4-8ITH |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
Mobile SDRAM MT48H4M16LF ?1 Meg x 16 x 4 banks
|
Micron Technology
|
